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SCH2819 rev.0 i page 1 of 6 i www.onsemi.com features composite type with a n-channel silicon mosfet (sch1419) and a schottky barrier diode (ss0503) contained in one package facilitating high-density mounting. [mosfet] low on-resistance. ultrahigh-speed switching. 2.5v drive. [sbd] short reverse recovery time. low forward voltage. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit [mosfet] drain-to-source voltage v dss 30 v gate-to-source voltage v gss 12 v drain current (dc) i d 1.5 a drain current (pulse) i dp pw 10 s, duty cycle 1% 6 a allowable power dissipation p d mounted on a ceramic board (900mm 2 ? 0.8mm) 1unit 0.6 w channel temperature tch 150 c storage temperature tstg - -55 to +125 c [sbd] repetitive peak reverse voltage v rrm 30 v nonrepetitive peak reverse surge voltage v rsm 30 v a verage output current i o 0.5 a surge forward current i fsm 50hz sine wave, 1 cycle 3 a junction temperature tj - -55 to +125 c storage temperature tstg - -55 to +125 c marking : qu ordering number : enn8291 SCH2819 mosfet : n-channel silicon mosfet sbd : schottky barrier diode general-purpose switching device applications ? 2011, scillc. all rights reserved. jan-2011, rev. 0 www.onsemi.com publication order number: SCH2819/d
SCH2819 rev.0 i page 2 of 6 i www.onsemi.com electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit [mosfet] drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 30 v zero-gate voltage drain current i dss v ds =30v, v gs =0v 1 a gate-to-source leakage current i gss v gs = 8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 0.4 1.3 v forward transfer admittance ? yfs ? v ds =10v, i d =800ma 1.3 2.2 s static drain-to-source on-state resistance r ds (on)1 i d =800ma, v gs =4v 165 215 m ? r ds (on)2 i d =400ma, v gs =2.5v 210 295 m ? input capacitance ciss v ds =10v, f=1mhz 130 pf output capacitance coss v ds =10v, f=1mhz 22 pf reverse transfer capacitance crss v ds =10v, f=1mhz 16 pf t urn-on delay time t d (on) see specified test circuit. 9 ns rise time t r see specified test circuit. 20 ns t urn-off delay time t d (off) see specified test circuit. 23 ns fall time t f see specified test circuit. 29 ns t otal gate charge qg v ds =10v, v gs =4v, i d =1.5a 2.2 nc gate-to-source charge qgs v ds =10v, v gs =4v, i d =1.5a 0.52 nc gate-to-drain ?iller?charge qgd v ds =10v, v gs =4v, i d =1.5a 0.52 nc diode forward voltage v sd i s =1.5a, v gs =0v 0.9 1.2 v [sbd] reverse voltage v r i r =0.5ma 30 v forward voltage v f i f =0.5a 0.42 0.48 v reverse current i r v r =15v 120 a interterminal capacitance c v r =10v, f=1mhz 13 pf reverse recovery time t rr i f =i r =100ma, see specified test circuit. 10 ns package dimensions electrical connection unit : mm 7028-003 1.6 1.6 1.5 0.05 0.5 0.05 0.56 0.25 0.2 0.2 1 3 2 64 5 1 : gate 2 : source 3 : anode 4 : cathode 5 : drain 6 : drain sanyo : sch6 654 123 t op view 1 : gate 2 : source 3 : anode 4 : cathode 5 : drain 6 : drain
SCH2819 rev.0 i page 3 of 6 i www.onsemi.com switching time test circuit t rr t est circuit [mosfet] [sbd] duty 10% 50 ? 100 ? 10 ? - -5v t rr 10 s 100ma 100ma 10ma pw=10 s d.c. 1% p. g 50 ? g s d i d =800ma r l =18.75 ? v dd =15v v out SCH2819 v in 4v 0v v in r ds (on) -- v gs it06104 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.2 100 200 300 400 500 50 150 250 350 450 0 0.4 0.6 0.8 1.0 0.1 0.3 0.5 0.7 0.9 i d -- v ds it06102 0246810 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 - -60 --40 --20 0 20 40 60 80 100 120 140 160 0 0 0.5 1.0 1.5 2.0 2.5 i d -- v gs it06103 r ds (on) -- ta it06105 100 200 300 400 500 50 150 250 350 450 0 v gs =1.0v 4.0v 3.0v 2.5v 1.5v v ds =10v - -25 c t a= --25 c 25 c 25 c ta= 75 c t a=25 c 400ma i d =800ma i d =400ma, v gs =2.5v i d =800ma, v gs =4.0v 75 c [mosfet] [mosfet] [mosfet] [mosfet] gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a ambient temperature, ta -- c static drain-to-source on-state resistance, r ds (on) -- m ? static drain-to-source on-state resistance, r ds (on) -- m ?
SCH2819 rev.0 i page 4 of 6 i www.onsemi.com 0.01 0.1 23 57 1.0 23 57 23 57 10 10 1000 7 5 3 2 100 7 5 3 2 7 5 3 2 1.0 sw time -- i d it06108 it06106 0.1 1.0 23 57 0.01 23 57 23 5 10 1.0 7 5 3 2 0.1 7 5 3 2 ? y fs ? -- i d ciss, coss, crss -- v ds it06107 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.01 0.1 10 1.0 7 5 3 2 7 5 3 2 7 5 3 2 i s -- v sd 0510 15 20 25 30 it06109 10 100 1000 7 5 3 2 7 5 3 2 0 0.5 1.0 1.5 2.0 2.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v gs -- qg it06110 0 0 20 40 0.2 0.4 0.6 0.8 60 80 100 120 140 160 p d -- ta it09564 a s o 2 3 5 7 1.0 0.1 2 3 5 7 0.01 2 3 5 7 10 1.0 23 57 10 0.1 23 57 0.01 23 57 23 5 it09563 v ds =10v 75 c 25 c t a= -- 25 c v gs =0v - -25 c 25 c ta= 75 c v dd =15v v gs =4v t d (on) t d (off) t r t f f=1mhz coss crss ciss v ds =10v i d =1.5a <10 s i dp =6a i d =1.5a 100 s 1ms 10ms 100ms dc operation (ta=25 c) operation in this area is limited by r ds (on). [mosfet] [mosfet] [mosfet] [mosfet] [mosfet] [mosfet] [mosfet] t otal gate charge, qg -- nc gate-to-source voltage, v gs -- v drain current, i d -- a switching time, sw time -- ns drain current, i d -- a forward transfer admittance, ? y fs ? -- s diode forward voltage, v sd -- v source current, i s -- a drain-to-source voltage, v ds -- v ciss, coss, crss -- pf drain-to-source voltage, v ds -- v drain current, i d -- a ambient temperature, ta -- c allowable power dissipation, p d -- w mounted on a ceramic board (900mm 2 ? 0.8mm) 1unit t a=25 c single pulse mounted on a ceramic board (900mm 2 ? 0.8mm) 1unit
SCH2819 rev.0 i page 5 of 6 i www.onsemi.com 10 2 3 5 7 3 5 7 100 0.1 1.0 23 57 10 23 5 23 5 77 c -- v r 0 0 0.1 0.2 0.30 0.35 0.25 0.15 0.10 0.05 0.20 0.3 0.4 0.5 0.6 p f (av) -- i o it08187 it07891 (2) (4) (3) (1) f=1mhz 0 1.0 0.1 0.01 0.3 0.4 0.1 0.2 7 5 3 2 7 5 3 2 0.6 0.5 i f -- v f t a=125 c 100 c 75 c 50 c 25 c it07927 it07928 0 1.0 2 5 3 7 2 5 3 7 2 5 3 7 2 5 3 7 2 5 3 7 10 100 1000 100000 10000 510 30 15 20 25 i r -- v r t a=125 c 25 c 50 c 75 c 100 c i s 20ms t 7 0.01 23 7 0.1 0 5237 1.0 523 3.0 3.5 2.0 1.0 2.5 1.5 0.5 id00338 i fsm -- t [sbd] [sbd] [sbd] [sbd] [sbd] forward voltage, v f -- v forward current, i f -- a reverse voltage, v r -- v reverse current, i r -- a a verage output current, i o -- a (1) rectangular wave =60 (2) rectangular wave =120 (3) rectangular wave =180 (4) sine wave =180 a verage forward power dissipation, p f (av) -- w 180 360 sine wave 360 rectangular wave i s 20ms t tim e, t -- s surge forward current, i fsm (peak) -- a reverse voltage, v r -- v interterminal capacitance, c -- pf current waveform 50hz sine wave
SCH2819 rev.0 i page 6 of 6 i www.onsemi.com SCH2819/d

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